SAERO2-K3
Automatic 200mm CMP System.
Mass production equipment
Process Performance
- High throughput ▷60wph(3Step 60sec)
- Stable polishing Removal rate from Head to Head
- 3-Step Wafer Polishing Possible
- Clean PAD by H.P Rinse
- Chemical flow rate and motion control are recipe-controlled
- Three wafers can be polished at the once on three platens
- Edge zone pressure control
Hardware Performance
- 4-Cassette,3-Platen 4-Head, Post Cleaner
- Spindle Cross 270 degree rotation
- Wafer load unload motor control
- Platen internal cooling application
- Model Description
Model | UNIT | Items | Type |
---|---|---|---|
AIP 300 | CARRIER | Motion | Rotation / Oscillation |
Head type | Membrane / Retainer Ring | ||
PLATEN | Motion | Rotation | |
Rotation Speed | MAX 200 rpm | ||
Pad | 30“ | ||
CONDITIONER | Motion | Rotation / Sweep | |
Dressing | In / Ex-situ | ||
DD size | 4“ | ||
OTHERS | Slurry Supply | Top down | |
Pad Clean | High Pressure DIW | ||
Wafer In-Out | Dry In/Wet Out | ||
EFEM | Robot | 4-axis | |
2Foup | Auto Mapping | ||
Input | High Pressure | Vertical | |
Transfer | Robot | 3-axis | |
Cleaner #1,#2 | Chemical Use | HF, HN4OH, SC1 | |
Brush Clean | Double Sid Scrubbing | ||
SRD | Scanning Nozzle | D.I Water | |
Motion | Rotation |